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Silicon carbide (SiC), also known as carborundum, is a compound of silicon and carbon with chemical formula SiC. Silicon carbide is a semiconductor, which can be doped n-type by nitrogen or phosphorus and p-type by beryllium, boron, aluminium, or gallium. Metallic conductivity has been achieved by heavy doping with boron, aluminium or nitrogen.SiC Substrates is a semiconductor material with unique electrical properties and excellent thermal properties , compared to silicon wafer and gallium arsenide wafer , SiC is more suitable for high temperatureand high power device .SiC Substrates can be supplied in diameter 2 inch , both 4-H or 6-H polytype N-type , Nitrogent doped , and Si face polished. It can be used in GaN epitaxy device, Optoelectronic device, High frequency device, High power device, High temperature device, Light emitting diodes.
Scope of the Report:
Currently, the global SiC wafer market is expensive, but still in short supply, high raw material costs 40 percent more than the price of silicon carbide semiconductor device, silicon carbide wafer price has become the bottleneck of the third-generation semiconductor industry. Thus, using the most advanced SiC crystal growth technology to achieve large-scale production, reduce production costs of silicon carbide wafers, will promote the rapid development of the third generation of the semiconductor industry, expanding market demand.
With SiC crystal growth and device fabrication technology to further improve the technology. The next few years a variety of SiC power electronic devices will get greater improvements in yield, reliability and price. To enter the stage of full promotion applications. This is likely to lead to a new power electronics technology revolution. Thus, the birth and development of SiC power electronic devices is a revolutionary progress in power electronics technology
The main application areas of silicon carbide wafers with LED solid-state lighting and high-frequency devices, the future of mobile phones and laptop backlight market will provide tremendous growth in demand for silicon carbide
The worldwide market for SiC Substrates is expected to grow at a CAGR of roughly 15.8% over the next five years, will reach 350 million US$ in 2024, from 170 million US$ in 2019, according to a new GIR (Global Info Research) study.
This report focuses on the SiC Substrates in global market, especially in North America, Europe and Asia-Pacific, South America, Middle East and Africa. This report categorizes the market based on manufacturers, regions, type and application.
Market Segment by Manufacturers, this report covers
- Cree (Wolfspeed)
- ROHM (sicrystal)
- II-VI Advanced Materials
- Dow Corning
- NSSMC
- SICC Materials
- TankeBlue Semiconductor
- Norstel
Market Segment by Regions, regional analysis covers
- North America (United States, Canada and Mexico)
- Europe (Germany, France, UK, Russia and Italy)
- Asia-Pacific (China, Japan, Korea, India and Southeast Asia)
- South America (Brazil, Argentina, Colombia etc.)
- Middle East and Africa (Saudi Arabia, UAE, Egypt, Nigeria and South Africa)
Market Segment by Type, covers
- Semi-insulating SiC Substrates
- Conductive SiC Substrates
Market Segment by Applications, can be divided into
- IT & Consumer
- LED lighting
- Automotive
- Industry
The content of the study subjects, includes a total of 15 chapters:
Chapter 1, to describe SiC Substrates product scope, market overview, market opportunities, market driving force and market risks.
Chapter 2, to profile the top manufacturers of SiC Substrates, with price, sales, revenue and global market share of SiC Substrates in 2017 and 2018.
Chapter 3, the SiC Substrates competitive situation, sales, revenue and global market share of top manufacturers are analyzed emphatically by landscape contrast.
Chapter 4, the SiC Substrates breakdown data are shown at the regional level, to show the sales, revenue and growth by regions, from 2014 to 2019.
Chapter 5, 6, 7, 8 and 9, to break the sales data at the country level, with sales, revenue and market share for key countries in the world, from 2014 to 2019.
Chapter 10 and 11, to segment the sales by type and application, with sales market share and growth rate by type, application, from 2014 to 2019.
Chapter 12, SiC Substrates market forecast, by regions, type and application, with sales and revenue, from 2019 to 2024.
Chapter 13, 14 and 15, to describe SiC Substrates sales channel, distributors, customers, research findings and conclusion, appendix and data source.