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A PIN diode is composed of an I-type region separating the P-type and N-type regions. Forward-biasing the diode adjusts the resistivity of the I-type region. Diodes take in power through an anode and release it into a positively-charged area of a semiconductor. A small intrinsic layer separates the positive area from a negative region. The power moves through the intrinsic into the negative and then out through a cathode back into the device.
PIN diodes are offered in discrete packages or integrated into IC processes. The benefit of using an integrated PIN diode for limiter design is the elimination of packaging parasitics, which degrade the receiver's noise performance. PIN diodes are built from an intrinsic (I) region of high resistivity in between a P-type and N-type semiconductor.
A typical diode has a very small intrinsic area. Usually, diodes are composed of two connection terminals connected by a semiconductor. Diodes take in power through an anode and release it into a positively-charged area of a semiconductor. A small intrinsic layer separates the positive area from a negative region. The power moves through the intrinsic into the negative and then out through a cathode back into the device.
Scope of the Report:
M/A-COM, Vishay and Infineon captured the top three revenue share spots in the PIN Diode market in 2016. M/A-COM dominated with 11.61 percent revenue share, followed by Vishay with 9.39 percent revenue share and Infineon with 9.12 percent revenue share.
In the next five years, the global consumption of PIN Diode will show upward tendency further, consumption is expected in 2022 will be 9957 (million Pcs).
The average operating rate will remain at 90% to 95%.
The worldwide market for PIN Diode is expected to grow at a CAGR of roughly xx% over the next five years, will reach xx million US$ in 2024, from xx million US$ in 2019, according to a new GIR (Global Info Research) study.
This report focuses on the PIN Diode in global market, especially in North America, Europe and Asia-Pacific, South America, Middle East and Africa. This report categorizes the market based on manufacturers, regions, type and application.
Market Segment by Manufacturers, this report covers
- M/A-COM
- Vishay
- Infineon
- AVAGO
- NXP
- ROHM
- ON Semiconductor
- Qorvo
- Renesas
- Albis
Market Segment by Regions, regional analysis covers
- North America (United States, Canada and Mexico)
- Europe (Germany, France, UK, Russia and Italy)
- Asia-Pacific (China, Japan, Korea, India and Southeast Asia)
- South America (Brazil, Argentina, Colombia etc.)
- Middle East and Africa (Saudi Arabia, UAE, Egypt, Nigeria and South Africa)
Market Segment by Type, covers
- RF PIN Diode
- PIN Photodiode
- PIN Switch Diode
- Others
Market Segment by Applications, can be divided into
- RF Switch
- Photodetector
- High Voltage Rectifier
- Attenuators
- RF Limiters
- Others
The content of the study subjects, includes a total of 15 chapters:
Chapter 1, to describe PIN Diode product scope, market overview, market opportunities, market driving force and market risks.
Chapter 2, to profile the top manufacturers of PIN Diode, with price, sales, revenue and global market share of PIN Diode in 2017 and 2018.
Chapter 3, the PIN Diode competitive situation, sales, revenue and global market share of top manufacturers are analyzed emphatically by landscape contrast.
Chapter 4, the PIN Diode breakdown data are shown at the regional level, to show the sales, revenue and growth by regions, from 2014 to 2019.
Chapter 5, 6, 7, 8 and 9, to break the sales data at the country level, with sales, revenue and market share for key countries in the world, from 2014 to 2019.
Chapter 10 and 11, to segment the sales by type and application, with sales market share and growth rate by type, application, from 2014 to 2019.
Chapter 12, PIN Diode market forecast, by regions, type and application, with sales and revenue, from 2019 to 2024.
Chapter 13, 14 and 15, to describe PIN Diode sales channel, distributors, customers, research findings and conclusion, appendix and data source.