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According to this study, over the next five years the Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors market will register a 36.8%% CAGR in terms of revenue, the global market size will reach $ 2068.1 million by 2025, from $ 590.2 million in 2019. In particular, this report presents the global revenue market share of key companies in Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors business, shared in Chapter 3.
This report presents a comprehensive overview, market shares, and growth opportunities of Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors market by product type, application, key manufacturers and key regions and countries.
This study specially analyses the impact of Covid-19 outbreak on the Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors, covering the supply chain analysis, impact assessment to the Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors market size growth rate in several scenarios, and the measures to be undertaken by Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors companies in response to the COVID-19 epidemic.
Segmentation by type: breakdown data from 2015 to 2020 in Section 2.3; and forecast to 2025 in section 10.7.
- Silicon Carbide Power Semiconductor
- Gallium Nitride Power Semiconductor
Segmentation by application: breakdown data from 2015 to 2020, in Section 2.4; and forecast to 2025 in section 10.8.
- Consumer Electronics
- New Energy Grid Connection
- Rail
- Industrial Motor
- Ups Power Supply
- New Energy Vehicles
- Other
This report also splits the market by region: Breakdown data in Chapter 4, 5, 6, 7 and 8.
- Americas
- United States
- Canada
- Mexico
- Brazil
- APAC
- China
- Japan
- Korea
- Southeast Asia
- India
- Australia
- Europe
- Germany
- France
- UK
- Italy
- Russia
- Middle East & Africa
- Egypt
- South Africa
- Israel
- Turkey
- GCC Countries
The report also presents the market competition landscape and a corresponding detailed analysis of the major vendor/manufacturers in the market. The key manufacturers covered in this report: Breakdown data in in Chapter 3.
- Infineon
- Shenzhen Basic Semiconductor Co., Ltd.
- CREE (Wolfspeed)
- STMicroelectronics
- ON Semiconductor
- Roma Semiconductor Group
- Littelfuse
- Mitsubishi Electric
- Tyco Tianrun Semiconductor Technology (Beijing) Co., Ltd.
- Fuji Electric
In addition, this report discusses the key drivers influencing market growth, opportunities, the challenges and the risks faced by key players and the market as a whole. It also analyzes key emerging trends and their impact on present and future development.
Research objectives
- To study and analyze the global Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors market size by key regions/countries, type and application, history data from 2015 to 2019, and forecast to 2025.
- To understand the structure of Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors market by identifying its various subsegments.
- Focuses on the key global Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors players, to define, describe and analyze the value, market share, market competition landscape, SWOT analysis and development plans in next few years.
- To analyze the Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors with respect to individual growth trends, future prospects, and their contribution to the total market.
- To share detailed information about the key factors influencing the growth of the market (growth potential, opportunities, drivers, industry-specific challenges and risks).
- To project the size of Gallium Nitride (GaN) and Silicon Carbide (SiC) Power Semiconductors submarkets, with respect to key regions (along with their respective key countries).
- To analyze competitive developments such as expansions, agreements, new product launches and acquisitions in the market.
- To strategically profile the key players and comprehensively analyze their growth strategies.