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Ferroelectric RAM (FeRAM, F-RAM or FRAM) is a random-access memory similar in construction to DRAM but utilizing a ferroelectric layer instead of a dielectric layer to achieve non-volatility. FeRAM is one of a growing number of alternative non-volatile random-access memory technologies which can offer that same functionality as flash memory.
FeRAM consists of a grid of small capacitors and associated wiring and signling transistors. Each storage element, a cell, consists of one capacitor and one transistor. Unlike the DRAM use a linear dielectric in its cell capacitor, dielectric structure in the FeRAM cell capacitor usually contains ferroelectric material, typically lead zirconate titanate (PZT).
A ferroelectric material has a nonlinear relationship between the applied electric field and the apparent stored charge. The ferroelectric characteristic has the form of a hysteresis loop, which is very similar in shape to the hysteresis loop of ferromagnetic materials. The dielectric constant of a ferroelectric is typically much higher than that of a linear dielectric because of the effects of semi-permanent electric dipoles formed in the crystal structure of the ferroelectric material. When an external electric field is applied across a dielectric, the dipoles tend to align themselves with the field direction, produced by small shifts in the positions of atoms and shifts in the distributions of electronic charge in the crystal structure. After the charge is removed, the dipoles retain their polarization state. Binary "0"s and "1"s are stored as one of two possible electric polarizations in each data storage cell. For example, in the figure a "1" is encoded using the negative remnant polarization "-Pr", and a "0" is encoded using the positive remnant polarization "+Pr".In terms of operation, FeRAM is similar to DRAM. Writing is accomplished by applying a field across the ferroelectric layer by charging the plates on either side of it, forcing the atoms inside into the "up" or "down" orientation (depending on the polarity of the charge), thereby storing a "1" or "0". Reading, however, is somewhat different than in DRAM. The transistor forces the cell into a particular state, say "0". If the cell already held a "0", nothing will happen in the output lines. If the cell held a "1", the re-orientation of the atoms in the film will cause a brief pulse of current in the output as they push electrons out of the metal on the "down" side. The presence of this pulse means the cell held a "1". Since this process overwrites the cell, reading FeRAM is a destructive process, and requires the cell to be re-written if it was changed.
LPI (LP Information)' newest research report, the "Ferroelectric RAM Industry Forecast" looks at past sales and reviews total world Ferroelectric RAM sales in 2022, providing a comprehensive analysis by region and market sector of projected Ferroelectric RAM sales for 2023 through 2029. With Ferroelectric RAM sales broken down by region, market sector and sub-sector, this report provides a detailed analysis in US$ millions of the world Ferroelectric RAM industry.
This Insight Report provides a comprehensive analysis of the global Ferroelectric RAM landscape and highlights key trends related to product segmentation, company formation, revenue, and market share, latest development, and M&A activity. This report also analyzes the strategies of leading global companies with a focus on Ferroelectric RAM portfolios and capabilities, market entry strategies, market positions, and geographic footprints, to better understand these firms' unique position in an accelerating global Ferroelectric RAM market.
This Insight Report evaluates the key market trends, drivers, and affecting factors shaping the global outlook for Ferroelectric RAM and breaks down the forecast by type, by application, geography, and market size to highlight emerging pockets of opportunity. With a transparent methodology based on hundreds of bottom-up qualitative and quantitative market inputs, this study forecast offers a highly nuanced view of the current state and future trajectory in the global Ferroelectric RAM.
The global Ferroelectric RAM market size is projected to grow from US$ 267.1 million in 2022 to US$ 355 million in 2029; it is expected to grow at a CAGR of 355 from 2023 to 2029.
The major players in global Ferroelectric RAM market include Ramtron, Fujistu, etc. The top 2 players occupy about 85% shares of the global market. North America and China are main markets, they occupy about 60% of the global market. Serial Memory is the main type, with a share about 60%. Smart Meters and Medical Devices are main applications, which hold a share about 50%.
This report presents a comprehensive overview, market shares, and growth opportunities of Ferroelectric RAM market by product type, application, key manufacturers and key regions and countries.
Market Segmentation:
Segmentation by type
- Serial Memory
- Parallel Memory
- Others
Segmentation by application
- Smart Meters
- Automotive Electronics
- Medical Devices
- Wearable Devices
- Others
This report also splits the market by region:
- Americas
- - United States
- - Canada
- - Mexico
- - Brazil
- APAC
- - China
- - Japan
- - Korea
- - Southeast Asia
- - India
- - Australia
- Europe
- - Germany
- - France
- - UK
- - Italy
- - Russia
- Middle East & Africa
- - Egypt
- - South Africa
- - Israel
- - Turkey
- - GCC Countries
The below companies that are profiled have been selected based on inputs gathered from primary experts and analyzing the company's coverage, product portfolio, its market penetration.
- Cypress Semiconductor
- Fujitsu
- Texas Instruments
- IBM
- Infineon
Key Questions Addressed in this Report
What is the 10-year outlook for the global Ferroelectric RAM market?
What factors are driving Ferroelectric RAM market growth, globally and by region?
Which technologies are poised for the fastest growth by market and region?
How do Ferroelectric RAM market opportunities vary by end market size?
How does Ferroelectric RAM break out type, application?
What are the influences of COVID-19 and Russia-Ukraine war?