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Resistive random-access memory is a type of non-volatile (NV) random-access (RAM) computer memory that works by changing the resistance across a dielectric solid-state material often referred to as a memristor. This technology bears some similarities to conductive-bridging RAM (CBRAM), and phase-change memory (PCM).
Scope of the Report:
Resistive Random Access Memory is an emerging technology that combines the advantages of both RAM and Flash: The Resistive Random Access Memory is non-volatile, fast, cost effective and does not degrade even after many Program/Erase cycles. It has been studied and developed for the last decade and its commercial usage is expected to increase dramatically over the next few years.
The major focus of Resistive Random Access Memory technology is to replace traditional Flash memory and is widely viewed as the "most likely to succeed" Flash replacement, since it provides the performance and manufacturability advantages over competing replacement alternatives.
The worldwide market for Resistive Random Access Memory is expected to grow at a CAGR of roughly 70.6% over the next five years, will reach 7000 million US$ in 2024, from 280 million US$ in 2019, according to a new GIR (Global Info Research) study.
This report focuses on the Resistive Random Access Memory in global market, especially in North America, Europe and Asia-Pacific, South America, Middle East and Africa. This report categorizes the market based on manufacturers, regions, type and application.
Market Segment by Manufacturers, this report covers
- PSCS
- Adesto
- Crossbar
- Fujitsu
- Intel
- Samsung Electronics
- TSMC
- Micron
- SK Hynix
- SMIC
- 4DS Memory
- Weebit Nano
Market Segment by Regions, regional analysis covers
- North America (United States, Canada and Mexico)
- Europe (Germany, France, UK, Russia and Italy)
- Asia-Pacific (China, Japan, Korea, India and Southeast Asia)
- South America (Brazil, Argentina, Colombia etc.)
- Middle East and Africa (Saudi Arabia, UAE, Egypt, Nigeria and South Africa)
Market Segment by Type, covers
- 180 nm
- 40nm
- Others
Market Segment by Applications, can be divided into
- Computer
- IoT
- Consumer Electronics
- Medical
- Others
The content of the study subjects, includes a total of 15 chapters:
Chapter 1, to describe Resistive Random Access Memory product scope, market overview, market opportunities, market driving force and market risks.
Chapter 2, to profile the top manufacturers of Resistive Random Access Memory, with price, sales, revenue and global market share of Resistive Random Access Memory in 2017 and 2018.
Chapter 3, the Resistive Random Access Memory competitive situation, sales, revenue and global market share of top manufacturers are analyzed emphatically by landscape contrast.
Chapter 4, the Resistive Random Access Memory breakdown data are shown at the regional level, to show the sales, revenue and growth by regions, from 2014 to 2019.
Chapter 5, 6, 7, 8 and 9, to break the sales data at the country level, with sales, revenue and market share for key countries in the world, from 2014 to 2019.
Chapter 10 and 11, to segment the sales by type and application, with sales market share and growth rate by type, application, from 2014 to 2019.
Chapter 12, Resistive Random Access Memory market forecast, by regions, type and application, with sales and revenue, from 2019 to 2024.
Chapter 13, 14 and 15, to describe Resistive Random Access Memory sales channel, distributors, customers, research findings and conclusion, appendix and data source.