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The insulated gate bipolar transistor (IGBT) and thyristor provide the advantage over metal-oxide-semiconductor field effect transistor (MOSFET) for minimum switching time and switching losses. In addition, it also provides the advantage over elevated breakdown voltage and less conduction losses of the bipolar junction transistor (BJT) in order to meet current power need. FACTS systems and HVDC use power electronic converters for power conversion and control power quality. Earlier, IGBTs and thyristors were used as key components in HVDC and FACTS converters for many years and now have been developed for higher power use. These devices also use high breakdown voltage and conduction losses in BJT to fulfill current power requirement.
Scope of the Report:
The worldwide market for IGBT and Thyristor is expected to grow at a CAGR of roughly xx% over the next five years, will reach xx million US$ in 2024, from xx million US$ in 2019, according to a new GIR (Global Info Research) study.
This report focuses on the IGBT and Thyristor in global market, especially in North America, Europe and Asia-Pacific, South America, Middle East and Africa. This report categorizes the market based on manufacturers, regions, type and application.
Market Segment by Manufacturers, this report covers
- Fuji Electric
- ABB
- Infineon Technologies
- Fairchild Semiconductor International
- Hitachi
- Mitsubishi Electric
- SEMIKRON
- Toshiba
- Renesas Electronics
- Danfoss
Market Segment by Regions, regional analysis covers
- North America (United States, Canada and Mexico)
- Europe (Germany, France, UK, Russia and Italy)
- Asia-Pacific (China, Japan, Korea, India and Southeast Asia)
- South America (Brazil, Argentina, Colombia etc.)
- Middle East and Africa (Saudi Arabia, UAE, Egypt, Nigeria and South Africa)
Market Segment by Type, covers
- High Power
- Medium Power
- Low Power
Market Segment by Applications, can be divided into
- Flexible AC Transmission System (FACTS)
- HVDC
The content of the study subjects, includes a total of 15 chapters:
Chapter 1, to describe IGBT and Thyristor product scope, market overview, market opportunities, market driving force and market risks.
Chapter 2, to profile the top manufacturers of IGBT and Thyristor, with price, sales, revenue and global market share of IGBT and Thyristor in 2017 and 2018.
Chapter 3, the IGBT and Thyristor competitive situation, sales, revenue and global market share of top manufacturers are analyzed emphatically by landscape contrast.
Chapter 4, the IGBT and Thyristor breakdown data are shown at the regional level, to show the sales, revenue and growth by regions, from 2014 to 2019.
Chapter 5, 6, 7, 8 and 9, to break the sales data at the country level, with sales, revenue and market share for key countries in the world, from 2014 to 2019.
Chapter 10 and 11, to segment the sales by type and application, with sales market share and growth rate by type, application, from 2014 to 2019.
Chapter 12, IGBT and Thyristor market forecast, by regions, type and application, with sales and revenue, from 2019 to 2024.
Chapter 13, 14 and 15, to describe IGBT and Thyristor sales channel, distributors, customers, research findings and conclusion, appendix and data source.